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| 1N4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in MiniMELF case with the type designation LL4448. DIM ENSIONS DIM A B C D inches Min. 1.083 Max. 0.154 0.075 0.020 Min. 27.50 mm Max. 3.9 1.9 0.52 Note Absolute Maximum Ratings (Ta=25 ) Symbols Values Units Reverse Voltage Peak reverse voltage Rectified current (Average) Half wave rectification with Resist. Load at Tamb=25 and f 50Hz Surge forward current at t<1s and Tj=25 Power dissipation at Tamb=25 Junction Temperature Storage temperature range VR VRM IO IFSM Ptot Tj TS 75 100 150 1) Volts Volts mA mA mW 500 500 1) 200 -65 to +200 Note: (1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1 Characteristics Forward voltage at IF=5mA at IF=100mA Leakage current at VR=20V at VR=75V at VR=20V, Tj=150 at Tj=25 Symbols Min. Typ. Max. Units VF VF IR IR IR V(BR)R Ctot trr RthA V 0.62 100 0.45 - 0.72 1 25 5 50 4 4 0.35 1) Volt nA uA uA Volts F nS K/mW - Reverse breakdown voltage tested with 100uA pulses Capacitance at VF=VR=0 Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 Thermal resistance junction to ambient Air Rectification efficiency at f=100MHz, VRF=2V Note: (1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Rectification efficiency measurement circuit 2 RATINGS AND CHARACTERISTIC CURVES 3 RATINGS AND CHARACTERISTIC CURVES 4 |
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